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Spintronics

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MIT Senior Research Scientist Jagadeesh Moodera and his group use a molecular beam epitaxy system to precisely control the fabrication of ultrathin quantum material combination layer structures. Studying the interfaces between such materials could lead to novel interface phenomena and new energy-efficient quantum devices.

Exploring new paths to future quantum electronics

Jagadeesh Moodera and colleagues to investigate interface-driven phenomena in quantum materials in the quest for energy-efficient quantum electronics.

May 11, 2020

MIT Associate Professor Joseph Checkelsky searches for new crystalline materials, known as “quantum materials,” capable of hosting exotic new quantum phenomena.

Finding the right quantum materials

Associate Professor Joseph Checkelsky wins $1.7 million Emergent Phenomena in Quantum Systems Initiative grant to pursue search for new crystalline materials.

May 5, 2020

This illustration shows the characteristic “sheriff star”-type pattern of the Fermi surface, or distribution of electron energy and momentum, for the kagome metal FeSn, a 1-to-1 ratio compound of iron and tin.

MIT researchers realize “ideal” kagome metal electronic structure

Newly synthesized compound of iron and tin atoms in 1-to-1 ratio displays unique behavior.

December 12, 2019

An MIT-invented circuit uses only a nanometer-wide “magnetic domain wall” to modulate the phase and magnitude of a spin wave, which could enable practical magnetic-based computing — using little to no electricity.

Toward more efficient computing, with magnetic waves

Circuit design offers a path to “spintronic” devices that use little electricity and generate practically no heat.

November 28, 2019

A domain wall (gray panel at center) separates regions with different spin orientations (green and blue arrows). MIT researchers discovered that a magnetic field applied at one particular angle through a single crystal of a new magnetic quantum material makes it harder for electrons to cross this domain wall.

Approaching the magnetic singularity

MIT researchers discover a material that changes electrical resistance only when a magnetic field is applied at a narrowly confined angle.

June 20, 2019

Work by researchers in the group of MIT materials science and engineering Professor Geoffrey Beach and colleagues in California, Germany, Switzerland and Korea, was featured on the covers of <i>Nature Nanotechnology</i> and <i>Advanced Materials.</i>

Controllable fast, tiny magnetic bits

MIT researchers show how to make and drive nanoscale magnetic quasi-particles known as skyrmions for spintronic memory devices.

January 3, 2019

Illustration shows how hydrogen ions (red dots), controlled by an electric voltage, migrate through an intermediate material to change the magnetic properties of an adjacent magnetic layer(shown in green).

Study opens route to ultra-low-power microchips

Innovative approach to controlling magnetism could lead to next-generation memory and logic devices.

November 12, 2018

Stephanie Bauman, an intern in the Materials Process Center and Center for Materials Science and Engineering's 2017 Summer Scholar program, holds a sample of manganese gallium, a new material known as an antiferromagnet, that can serve as the basis for long lasting, spintronic computer memory devices. She worked in the lab of assistant professor of electrical engineering Luqiao Liu.

Developing new magnetic device materials

Summer Scholar Stephanie Bauman interns in Luqiao Liu lab synthesizing and testing manganese gallium samples for spintronic applications.

October 2, 2017

Fast-moving magnetic particles could enable new form of data storage

Recently discovered phenomenon could provide a way to bypass the limits to Moore’s Law.

October 2, 2017

“There are many thousands of combinations of materials and interfaces that we can create,” says associate professor Geoffrey Beach. “So with this wealth of material structures, rather than relying on the few materials that nature has given us, we can now design materials and their magnetic properties to exhibit the characteristics that we want.”

Geoffrey Beach: Drawn to explore magnetism

Materials researcher is working on the magnetic memory of the future.

April 24, 2017

Researchers at MIT have discovered new way of using laser light to tune electronic energy levels in two-dimensional films of crystal. The discovery could ultimately pave the way for the development of so-called “valleytronic” devices, which harness the way electrons gather around two equal energy states, known as valleys.

Toward “valleytronic” devices for data storage or computer logic systems

Researchers have discovered a new way to tune electronic energy levels in some 2-D materials.

March 9, 2017

Summer Scholar Grant Smith looks into a sputter deposition chamber, where he makes ultrathin films — from 2 to 10 nanometers thick — of magnetic materials suitable for spin-based electronics such as those used in computer memory systems.

Booting up spin-based device studies

Summer Scholar Grant Smith works to establish parameters for making ferromagnetic thin films in the Luqiao Liu lab.

August 15, 2016

At left: A single crystal compound of gadolinium, platinum, and bismuth made with naturally occurring elements. At right, a single crystal of this material made with isotopically enriched gadolinium for neutron scattering experiments. Both crystals are approximately 1 mm in size.

Mixing topology and spin

MIT-led team demonstrates paired topology and intrinsic magnetism in compound combining gadolinium, platinum, and bismuth.

July 19, 2016

Arrows indicate the spin direction in the ferromagnetic insulator (EuS, shown in red) and topological insulator (Bi2Se3, shown in blue) at the interface between the two materials.

Researchers find unexpected magnetic effect

Combining two thin-film materials yields surprising room-temperature magnetism.

May 9, 2016

MIT postdoc Cui-Zu Chang works with equipment that can monitor topological insulator thin-film quality as it grows. The bright green vertical bar on computer screen is an indicator of very high-quality film growth. Chang led work in the Moodera group showing the first zero-resistance edge state in a circuit.

Achieving zero resistance in energy flow

MIT postdoc Cui-Zu Chang makes a spintronic breakthrough in the Moodera group.

May 6, 2016