Skip to content ↓

Del Alamo is awarded 2012 Intel Outstanding Researcher Award in Emerging Research Devices

Professor Jesús del Alamo in his lab
Professor Jesús del Alamo in his lab
Photo: Patricia Sampson/EECS

Jesús del Alamo, the Donner Professor, MacVicar Faculty Fellow and Professor of Electrical Engineering in the Department of Electrical Engineering and Computer Science (EECS‚ has been recognized by Intel with the 2012 Intel Outstanding Researcher Award in Emerging Research Devices for his "Feasibility Study of InGaAs-based Quantum-Well Field-Effect Transistors for Ultra High Speed, Low Power Logic Applications."

The award citation by Intel Senior Fellow Robert Chau reads: "For your seminal insights into high performance and scalable III-V High-Electron Mobility Transistors." Chau also congratulated del Alamo with the following citation statement:
"This research focuses on the systematic study of using high mobility channel materials such as InGaAs for high performance and low power CMOS logic devices. The work includes the investigation into scalability of the III-V HEMT, III-V device benchmarking with Si CMOS and p-channel III-V quantum wells. This work is both fundamentally interesting and important to the semiconductor industry. The regular interactions that you and your students have had with the Intel researchers have been outstanding. Your numerous seminars on 'III-Vs: From THz to CMOS' have generated insightful discussions."
Del Alamo leads his research program on compound semiconductor transistor technologies for millimeter wave and future logic applications at the MIT Microsystems Technology Laboratories, where he is also associate director. For several years, he and his students have been investigating the potential of compound semiconductors made out of elements from columns III and V of the periodic table (“III-V’s”) to enable a new class of nanometer-scale transistors for future digital applications. His goal is to extend Moore's law by several generations of technology using III-V’s. Using the same materials, del Alamo's group has also worked toward pushing the state of the art in high frequency transistors. The InAs High Electron Mobility Transistors his group has developed over the last several years have broken the world record for the highest cut-off frequency transistor of any kind fabricated in any material system.

Del Alamo is also known for his leadership of the iLab Project, which he created in 1998 to remotely access hands-on laboratories through the Internet. This project routinely allows students from all over the world to carry out experiments in labs created at MIT for circuits, electronics and physics education.

Related Links

Related Topics

More MIT News